半导体桥裸桥与装LTNR 时的点火特性

马鹏; 张琳; 朱顺官; 张垒; 陈厚和

doi:10.11883/1001-1455(2011)03-0317-05

半导体桥裸桥与装LTNR 时的点火特性

doi: 10.11883/1001-1455(2011)03-0317-05

1.
南京理工大学化工学院,江苏南京210094

详细信息

通讯作者:
朱顺官

计量
- 文章访问数: 2753
- HTML全文浏览量: 74
- PDF下载量: 201
- 被引次数: 0
出版历程
- 刊出日期: 2011-05-25

Ignitioncharacteristicsofsemiconductorbridges withandwithoutLTNR

1.
SchoolofChemicalEngineering,NanjingUniversityofScienceandTechnology,

摘要

摘要: 通过对比半导体桥裸桥与装药条件下发火电压、电流及电容的放电曲线,比较了等离子体产生时二次峰的出现时间、持续时间、峰值电压以及裸桥与装药时的积分能量。发现裸桥的二次峰出现时间及持续时间均比装药桥长,裸桥的积分能量比装药桥高且随电容呈线性变化,装药桥的积分能量较低且变化不大。主要原因在于裸桥是在空气中产生等离子体而装药桥产生等离子体并引发斯蒂芬酸铅(LTNR)热分解后,其热分解的能量足以维持LTNR自身反应的进行。
- 爆炸力学 /
- 点火特性 /
- LTNR /
- 半导体桥 /
- 积分能量
Abstract: Abstract:Bytakingthepulsedischargeswithdifferentcapacitancesastheinputenergy,semiconductorbridges( SCB)withandwithoutleadtrinitroresorcinate(LTNR)wereexperimentallyinvestigated, respectively.Experimentalresultsshowthatthereexistdifferencesinignitionenergy,plasma secondpeakappearancetimeanditsdurationtimeaswellasitspeakvoltagebetweenthetwokindsof SCBs.TheintegralenergyofthebareSCBishigherthanthatoftheSCBwithLTNRatthesamecapacitanceanditchangeslinearlywithcapacitance, buttheintegralenergyoftheSCBwithLTNRis nearlychangeless.ThereasonliesinthefactthattheplasmaofthebareSCBisgeneratedintheair, butforthechargedSCBtheplasmageneratedisusedtoheatLTNRandthenthedecompositionheat ofLTNRcanmaintainthefollowingreaction.Furthermore,theplasmasecondpeakappearanceofthe bareSCBislater,thesecondpeakdurationtimeislonger,andthepeakvoltageofthesecondpeakis lowerthanthoseofthechargedSCBatthesamecapacitance.
- mechanicsofexplosion /
- ignitioncharacteristic /
- LTNR /
- semiconductorbridge /
- integral energy