Voltage transient characteristics and microscopic mechanism of tantalum capacitors under impact load

WANG Jiale; LI Hongwei; WANG Xiaobing; LIANG Hao; ZHOU En; SU Hong; ZHAO Jinyao

doi:10.11883/bzycj-2023-0232

Volume 44 Issue 4

Apr. 2024

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WANG Jiale, LI Hongwei, WANG Xiaobing, LIANG Hao, ZHOU En, SU Hong, ZHAO Jinyao. Voltage transient characteristics and microscopic mechanism of tantalum capacitors under impact load[J]. Explosion And Shock Waves, 2024, 44(4): 043101. doi: 10.11883/bzycj-2023-0232

Citation:

WANG Jiale, LI Hongwei, WANG Xiaobing, LIANG Hao, ZHOU En, SU Hong, ZHAO Jinyao. Voltage transient characteristics and microscopic mechanism of tantalum capacitors under impact load[J]. Explosion And Shock Waves, 2024, 44(4): 043101. doi: 10.11883/bzycj-2023-0232

Citation:

WANG Jiale, LI Hongwei, WANG Xiaobing, LIANG Hao, ZHOU En, SU Hong, ZHAO Jinyao. Voltage transient characteristics and microscopic mechanism of tantalum capacitors under impact load[J]. Explosion And Shock Waves, 2024, 44(4): 043101. doi: 10.11883/bzycj-2023-0232

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Voltage transient characteristics and microscopic mechanism of tantalum capacitors under impact load

doi: 10.11883/bzycj-2023-0232

1.
School of Chemical and Blasting Engineering, Anhui University of Science and Technology, Huainan 232001, Anhui, China
2.
Sinosteel Maanshan General Institute of Mining Research Co., Ltd., Maanshan 243000, Anhui, China

Received Date: 2023-06-30
Rev Recd Date: 2023-11-14

Available Online: 2023-11-15

Publish Date: 2024-04-07

Abstract

Abstract

To investigate the failure mechanism of tantalum capacitors under shock loads, shock experiments were conducted on tantalum capacitors using shock waves generated by underwater explosions with an electronic detonator. Five groups of experiments with different shock intensities were designed by varying the distance between the capacitor and the electronic detonator. The transient voltage characteristics of tantalum capacitors under different intensity shock loads were studied. The voltage variations of tantalum capacitors were explained based on the changes in internal leakage current and external charging current, and the failure modes of tantalum capacitors were analyzed. Scanning electron microscopy was utilized to observe the microstructure of damaged areas in tantalum capacitors and the micro-failure mechanisms of tantalum capacitors under shock loads were discussed. The results indicate that tantalum capacitors experience short-circuit failures after shocks, with a significant decrease in voltage initially, followed by a slow rise and self-recovery. As the shock wave overpressure increases, the probability of tantalum capacitor failure increases, with a critical overpressure threshold of approximately 32 MPa. Different types of voltage variations correspond to different failure modes, including instant self-recovery after breakdown, slow self-recovery after breakdown, and repetitive breakdown with self-recovery. Different types of voltage variations exhibit significant differences in the peak values of initial leakage currents, with the first type ranging from 2.5 A to 5 A, the second type ranging from 1 A to 2 A, and the third type ranging from 8 A to 9 A. Moreover, larger peak values of leakage currents result in narrower peak widths. The micro-failure mechanisms of tantalum capacitors under shock loads include the propagation of microcracks within the oxide film leading to excessive local electric field strength and breakdown, impurities and surrounding crystalline oxide film protruding to form conductive channels in the region of thinner oxide film, and the formation of through-cracks followed by gas ionization leading to breakdown.
- tantalum capacitor,
- shock loading,
- underwater explosion,
- electronic detonator

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References(15)

References

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